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| inchange semiconductor isc product specification isc silicon pnp power transistor 2SA614 description collector-emitter breakdown voltage- : v (br)ceo = -55v (min.) collector-emitter saturation voltage- : v ce(sat) = -0.5v (max.)@ i c = -1a collector power dissipation- : p c = 25w@ t c = 25 applications designed for medium power amplifier applications. absolute maximum ratings(ta=25 ) symbol parameter value unit v cbo collector-base voltage -80 v v ceo collector-emitter voltage -55 v v ebo emitter-base voltage -5 v i c collector current-continuous -3 a p c collector power dissipation 25 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SA614 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -10ma; i b = 0 -55 v v (br)cbo collector-base breakdown voltage i c = -500 a; i e = 0 -80 v v (br)ebo emitter-base breakdown voltage i e = -500 a; i c = 0 -5 v v ce( sat ) collector-emitter saturation voltage i c = -1a; i b = -0.1a b -0.5 v i cbo collector cutoff current v cb = -80v; i e = 0 -50 a i ebo emitter cutoff current v eb = -5; i c = 0 -50 a h fe dc current gain i c = -0.5a; v ce = -5v 40 240 ? h fe classifications r o y 40-80 70-140 120-240 isc website www.iscsemi.cn 2 |
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